| PART |
Description |
Maker |
| HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT
30A, 1200V N-Channel IGBT
75A 1200V NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
http://
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| RHRG30120CC FN3411 |
30A/ 1200V Hyperfast Dual Diode
30A, 1200V Hyperfast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RHRP30120 |
30A, 1200V Hyperfast Diode
|
Fairchild Semiconductor
|
| RJH1CV6DPK RJH1CV6DPK-00T0 |
1200V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJK0852DPB RJK0852DPB-00-J5 RJK0852DPB-13 |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RHRP30120 FN3409 |
From old datasheet system
30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| RHRG30120 FN3410 |
From old datasheet system
30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| RURP30120 FN3397 |
From old datasheet system
30A, 1200V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|
